advanced power n-channel enhancement mode electronics corp. power mosfet low gate charge bv dss 80v single drive requirement r ds(on) 45m fast switching performance i d 21.3a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c thermal resistance junction-case max. 3.0 /w rthj-a thermal resistance junction-ambient max. 110 /w data and specifications subject to change without notice thermal data parameter storage temperature range total power dissipation 41.7 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.33 continuous drain current, v gs @ 10v 13.4 pulsed drain current 1 80 gate-source voltage 25 continuous drain current, v gs @ 10v 21.3 parameter rating drain-source voltage 80 200406041 AP9980H/j the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. g d s the to-252 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap9980j) are available for low-profile applications. g d s to-251(j) g d s to-252(h)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 80 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.07 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =12a - - 45 m v gs =4.5v, i d =8a - - 55 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =12a - 20 - s i dss drain-source leakage current (t j =25 o c) v ds =80v, v gs =0v - - 10 ua drain-source leakage current (t j =150 o c) v ds =64v ,v gs =0v - - 100 ua i gss gate-source leakage v gs =25v - - na q g total gate charge 2 i d =12a - 18 30 nc q gs gate-source charge v ds =64v - 5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 11 - nc t d(on) turn-on delay time 2 v ds =40v - 11 - ns t r rise time i d =12a - 20 - ns t d(off) turn-off delay time r g =3.3 , v gs =10v - 29 - ns t f fall time r d =3.3 -30- ns c iss input capacitance v gs =0v - 1810 2900 pf c oss output capacitance v ds =25v - 135 - pf c rss reverse transfer capacitance f=1.0mhz - 96 - pf r g gate resistance f=1.0mhz - 1.6 - source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =20a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =12a, v gs =0 v , - 57 - ns q rr reverse recovery charge di/dt=100a/s - 140 - nc notes: 1.pulse width limited by safe operating area. 2.pulse width < 300us , duty cycle < 2%. AP9980H/j 100
AP9980H/j fig 1. typical output characteristics fig 2. typical output characteristics t rr q rr fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 0 10 20 30 40 50 60 0 3 6 9 121518 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 6.0v 5.0v 4.5v v g =3.0v 0 10 20 30 40 50 0369121518 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 6.0v 5.0v 4.5v v g =3.0v 38 42 46 50 54 357911 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =8a t c =25 o c 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =12a v g =10v 0 0.5 1 1.5 2 2.5 3 -50 0 50 100 150 t j , junction temperature ( o c) v gs(th) (v) 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c
fig 7. gate charge characteristics fig 8. typical capacitance characteristics q rr fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform AP9980H/j t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 0 2 4 6 8 10 12 0 10203040 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =12a v ds =40v v ds =50v v ds =64v 10 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) 10us 100us 1ms 10ms 100ms dc t c =25 o c single pulse
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